Title :
High-performance InP-based HEMT´s with a graded pseudomorphic channel
Author :
Chough, K.B. ; Hong, B.W.-P. ; Caneau, C. ; Song, J.I. ; Jeon, K.I. ; Hong, S.C. ; Lee, K.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
This paper reports effects of the composition grading of the channel on device characteristics of Al/sub 0.48/In/sub 0.52/As/Ga/sub 1-x/In/sub x/As pseudomorphic HEMT´s. Systematic studies reveal that the modification of the quantum-well channel by grading the composition considerably changes the channel breakdown (BV/sub ds/) and output conductance (g/sub 0/) characteristics. HEMT´s with graded Ga/sub 1-x/In/sub x/As channel (x=0.7 to 0.6) exhibited improved BV/sub ds/, (11 V) and g/sub 0/ (40 mS/mm) compared with HEMT´s with uniform composition (x=0.7) in the channel (BV/sub ds/=4 V and g/sub 0/=80 mS/mm).<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor quantum wells; 11 V; Al/sub 0.48/In/sub 0.52/As-GaInAs; InP; channel breakdown; composition grading; output conductance; pseudomorphic HEMTs; quantum-well channel; Degradation; Etching; Gold; HEMTs; Indium; Potential well; Quantum well devices; Schottky diodes; Springs; Temperature;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347363
