Title :
Passivation of highly boron doped silicon surfaces by sputtered AlOx and PECVD SiN, a comparison
Author :
Li, T.-T.A. ; Cuevas, A. ; Tan, J. ; Samundsett, C. ; Saynova, D. ; Geerligs, B.
Author_Institution :
Sch. of Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an optimised PECDV SiN process that includes a chemically grown SiO2 interfacial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88-210 Ω/□, are already consistent with solar cell with efficiencies in the 20% range.
Keywords :
boron; current density; electron-hole recombination; elemental semiconductors; heavily doped semiconductors; passivation; plasma CVD; silicon; silicon compounds; solar cells; sputter deposition; surface resistance; Al target; AlOx; RF sputtering; Si:B; SiN; SiO2; boron-diffused emitters; chemically grown silica interfacial layer; emitter recombination current densities; highly boron doped silicon surfaces; optimised PECDV SiN process; passivation levels; sheet resistances; solar cell; sputtered AlOx; surface passivation; Atomic layer deposition; Resistance; Silicon compounds;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699694
