High-speed InP/InGaAs heterojunction phototransistors with emitter metal reflector

Author

Fukano, H. ; Kobayashi, T. ; Takanashi, Y. ; Fujimoto, M.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

213

Lastpage

216

Abstract

This paper reports the characteristics of InP/InGaAs heterojunction phototransistors (HPTs) in which light is incident through the substrate. These HPTs have a base terminal and a non-alloyed emitter metal reflector that increases the quantum efficiency to 37% regardless of the thin base and collector light-absorbing layers. An optical gain of more than 70 and an optical gain cutoff frequency (f/sub c/) of 22 GHz are obtained at the 3/spl times/3 /spl mu/m/sup 2/ emitter HPT. This HPT has the capability of operating as a high-speed heterojunction bipolar transistor (HBT) at the same time. A current gain cutoff frequency (f/sub T/) of 128 GHz is obtained for HBTs fabricated on the same wafer.<>

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; light absorption; optical receivers; phototransistors; 128 GHz; 22 GHz; 37 percent; InP-InGaAs; InP/InGaAs; base terminal; collector light-absorbing layers; cutoff frequency; heterojunction bipolar transistor; heterojunction phototransistors; nonalloyed emitter metal reflector; optical gain; quantum efficiency; Absorption; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical receivers; Phototransistors; Stimulated emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347367

Filename

347367