High fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor having new wiring structure over photodiodes

Author

Tohyama, S. ; Masubuchi, K. ; Konuma, K. ; Azuma, H. ; Tanabe, A. ; Utsumi, H. ; Teranishi, N. ; Takano, E. ; Yamagata, S. ; Hijikawa, M. ; Sahara, H. ; Muramatsu, T. ; Seki, T. ; Ono, T. ; Goto, H.

Author_Institution

Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

183

Lastpage

186

Abstract

A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using a new wiring structure, referred to as CLOSE Wiring. CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4 percent fill factor and 3.3 /spl mu/m wide VCCD in a 30 /spl mu/m/spl square/ pixel. The charge handling capability for VCCD achieves 9.8/spl times/10/sup 5/ electrons. The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with f/1.3 optics.<>

Keywords

CCD image sensors; Schottky-barrier diodes; infrared imaging; photodiodes; platinum alloys; silicon alloys; wiring; 130 pixel; 16900 pixel; CLOSE Wiring; PtSi; Schottky-barrier IR-CCD image sensor; back surface illumination; charge handling; clock line design; fill factor; noise equivalent temperature difference; photodiodes; progressive scanned interline-scheme; vertical CCD; Charge coupled devices; Clocks; Electrons; Image sensors; Optical noise; Photodiodes; Pixel; Space charge; Temperature sensors; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347370

Filename

347370