Monolithic CCD time-delay-and-integrate arrays in HgCdTe

Author

Wadsworth, M.V. ; Borrello, S. ; Dodge, J. ; Gooch, R. ; McCardel, W. ; Nado, G. ; Shilhanek, M.

Author_Institution

Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

179

Lastpage

182

Abstract

Charge-coupled device (CCD) infrared detector arrays in 5 /spl mu/m cutoff HgCdTe have been demonstrated for low background applications. These fully monolithic CCD arrays incorporate time-delay-and-integrate (TDI) detection, serial readout multiplexing, charge-to-voltage conversion and buffer amplification in the HgCdTe detector chip. Performance data indicates the monolithic CCD to be a viable alternative to present hybrid focal plane array technology.<>

Keywords

CCD image sensors; II-VI semiconductors; cadmium compounds; delay circuits; infrared imaging; mercury compounds; 5 micron; HgCdTe; HgCdTe chip; buffer amplification; charge-to-voltage conversion; infrared detector; low background applications; monolithic CCD arrays; serial readout multiplexing; time-delay-and-integrate detection; Charge coupled devices; Charge transfer; Clocks; Diodes; Infrared detectors; Integrated circuit noise; Multiplexing; Optical amplifiers; Optical buffering; Sensor arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347371

Filename

347371