DocumentCode :
2314794
Title :
A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation
Author :
Manning, T.J. ; Hardy, T. ; Merklein, M. ; Wintrebert-Fouquet, M. ; Phillips, M.R.
Author_Institution :
Microstruct. Anal. Unit, Univ. of Technol., Sydney, NSW, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
139
Lastpage :
140
Abstract :
Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (~77 K).
Keywords :
III-V semiconductors; cathodoluminescence; electron beam effects; gallium compounds; magnesium; radiation quenching; wide band gap semiconductors; GaN:Mg; LEEBI; acceptor activation mechanism; donor-acceptor pair; free-bound transition; liquid nitrogen temperatures; low energy electron beam irradiation; quenching; room temperature cathodoluminescence emission; temperature 293 K to 298 K; temperature 77 K; temperature 80 K; Gallium nitride; Monitoring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699705
Filename :
5699705
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2314794
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