Title :
Effect of very low power inductively coupled plasma etching on ohmic contacts to p-GaN
Author :
Baharin, A. ; Pinto, R.S. ; Mishra, U.K. ; Nener, B.D. ; Parish, G.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
We report on the electrical characterisation of etched Mg-doped p-GaN layers using low power inductively coupled plasma reactive ion etching (ICP-RIE). Although the quality of ohmic contacts to p-GaN is generally degraded by plasma etching, the results, assessed by current-voltage characteristics and Transmission Line Model (TLM) analysis, indicate that the ohmic contacts improve significantly as the power is reduced from ICP/RF power of 150/75 W to very low ICP/RF power of 40/20 W.
Keywords :
III-V semiconductors; gallium compounds; magnesium; ohmic contacts; semiconductor doping; sputter etching; transmission lines; wide band gap semiconductors; AlO3; GaN:Mg; ICP-RF power; ICP-RIE; TLM; current-voltage characteristics; electrical characterisation; etched Mg-doped p-GaN layers; inductively coupled plasma reactive ion etching; ohmic contacts; plasma etching; power 150 W; power 20 W; power 40 W; power 75 W; power reduction; transmission line model; Annealing; Etching; Gallium nitride; Iterative closest point algorithm; Ohmic contacts; Plasmas; Radio frequency;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699708
