First-principle study on coupling between arsenic in-suit impurities and mercury vacancies in HgCdTe

Author

Huang, Y. ; Chen, X.S. ; Zhou, X.H. ; Wang, X.F. ; Wang, L. ; Lu, W.

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

By using first-principle energy calculations, we found that the coupling structures between As in-suit substitute impurities and Hg vacancy in HgCdTe having p-type characteristics no matter As in-suit substitute Hg or Te atom. However, the characteristics of the coupling structures between As in-suit interstitial atom and mercury vacancy depend on the relative site of the interstitial atom.

Keywords

Fermi level; II-VI semiconductors; ab initio calculations; arsenic; cadmium compounds; impurities; interstitials; mercury compounds; semiconductor doping; vacancies (crystal); Fermi level; HgCdTe:As; arsenic in-suit impurities; coupling structures; first-principle energy calculations; in-suit interstitial atom; mercury vacancies; p-type characteristics; Conductors; Doping; Impurities; Infrared detectors; Materials science and technology; Mercury (metals); Neural networks; Physics; Sun; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5324609

Filename

5324609