Influence of sputtering substrate temperature and high temperature annealing methods on the properties of SRO/SiO2 superlattices

Author

Chen, C. ; Hao, X.J. ; Green, M.A.

Author_Institution

Sch. of Photovoltaic & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

151

Lastpage

152

Abstract

P-doped silicon rich oxide (SRO) /silicon dioxide (SiO₂) superlattices, deposited by sputtering method under different substrate temperatures, were treated using conventional furnace annealing or rapid thermal annealing (RTA). Raman and X-ray diffraction (XRD) were used to characterize the samples. Results show larger nanocrystal size is formed by furnace annealing than by RTA. High crystallinity can be achieved by increasing substrate temperature and using furnace annealing.

Keywords

Raman spectra; X-ray diffraction; elemental semiconductors; nanostructured materials; rapid thermal annealing; semiconductor quantum dots; silicon; silicon compounds; sputter deposition; superlattices; RTA; Raman spectra; Si-SiO₂; X-ray diffraction; XRD; conventional furnace annealing; high temperature annealing method; nanocrystal size; rapid thermal annealing; sputtering substrate temperature; superlattices; Annealing; Educational institutions; Logic gates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699711

Filename

5699711