Title :
Influence of sputtering substrate temperature and high temperature annealing methods on the properties of SRO/SiO2 superlattices
Author :
Chen, C. ; Hao, X.J. ; Green, M.A.
Author_Institution :
Sch. of Photovoltaic & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
P-doped silicon rich oxide (SRO) /silicon dioxide (SiO2) superlattices, deposited by sputtering method under different substrate temperatures, were treated using conventional furnace annealing or rapid thermal annealing (RTA). Raman and X-ray diffraction (XRD) were used to characterize the samples. Results show larger nanocrystal size is formed by furnace annealing than by RTA. High crystallinity can be achieved by increasing substrate temperature and using furnace annealing.
Keywords :
Raman spectra; X-ray diffraction; elemental semiconductors; nanostructured materials; rapid thermal annealing; semiconductor quantum dots; silicon; silicon compounds; sputter deposition; superlattices; RTA; Raman spectra; Si-SiO2; X-ray diffraction; XRD; conventional furnace annealing; high temperature annealing method; nanocrystal size; rapid thermal annealing; sputtering substrate temperature; superlattices; Annealing; Educational institutions; Logic gates;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699711
