Title :
THz generation using 800 to 1550 nm excitation of photoconductors
Author :
Wood, C.D. ; Hatem, O. ; Cunningham, J.E. ; Linfield, E.H. ; Davies, A.G. ; Cannard, P.J. ; Moodie, D.G. ; Pate, M. ; Robertson, M.J.
Author_Institution :
Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds, UK
Abstract :
We demonstrate the efficient generation of terahertz (THz) radiation from Fe-doped InGaAs-based photoconductive antennas. We present time-domain data showing generation of pulsed THz radiation from antennas fabricated on two different wafers, optimized to maximize the near-infrared-to-THz conversion efficiency. Detection was performed using both (110) ZnTe and GaP crystals, with pump and probe wavelengths being adjusted from 800 nm to 1550 nm using a cavity-tuned OPO pumped by a pulsed near-infrared Ti:Sapphire laser.
Keywords :
II-VI semiconductors; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; iron; optical parametric oscillators; optical pumping; photoconducting devices; terahertz wave detectors; terahertz wave generation; zinc compounds; GaP; InGaAs:Fe; ZnTe; cavity-tuned OPO pumping; near-infrared-to-THz conversion efficiency; photoconductive antenna fabrication; photoconductor excitation; pulsed THz radiation generation; pulsed near-infrared laser; time-domain data; wavelength 800 nm to 1550 nm; Iron; Laser beams; Laser excitation; Optical pulses; Photoconductivity; Probes; Pump lasers; Structural beams; Time domain analysis; Zinc compounds;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324613
