Title :
An efficient simulation method for linking bipolar process and device optimization to circuit performance
Author :
Hurkx, G.A.M. ; Baltus, P.G.M. ; Bladt, E.P.M. ; Knuvers, M.P.G.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
An efficient method of simulating process and geometry dependence of compact model parameters for circuit simulation is presented. It facilitates efficient bipolar process and device optimization with respect to circuit performance. The results of this scaling method are in good agreement with measurements.<>
Keywords :
bipolar integrated circuits; circuit analysis computing; semiconductor process modelling; bipolar process; circuit performance; circuit simulation; device optimization; model parameters; scaling; simulation; Circuit optimization; Circuit simulation; Geometry; Integrated circuit modeling; Joining processes; Laboratories; Optimization methods; Parameter extraction; Solid modeling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347388
