DocumentCode
2314966
Title
Deep-level transient spectroscopy study of channelled boron implantation in silicon.
Author
Deam, L. ; Johnson, B.C. ; McCallum, J.C.
Author_Institution
Australian Res. Council Centre of Excellence for Quantum Comput. Technol., Univ. of Melbourne, Melbourne, VIC, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
157
Lastpage
158
Abstract
Boron ions will be implanted at 150 keV down the <;100>; axis of n-type silicon. Deep-level transient spectroscopy will be used to study the range, concentration and species of the created defects. A comparison to crystal-TRIM results will be made in order to refine model parameters.
Keywords
boron; channelling; crystal defects; deep level transient spectroscopy; elemental semiconductors; ion implantation; semiconductor doping; silicon; Si:B; boron ions; channelled boron implantation; concentration defects; crystal-TRIM results; deep-level transient spectroscopy; electron volt energy 150 keV; model parameters; n-type silicon; Boron; Ions; Physics; Semiconductor device modeling; Silicon; Spectroscopy; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699715
Filename
5699715
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