Title :
Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium
Author :
Johnson, B.C. ; Leong, M. ; Kandasamy, S. ; Holland, A. ; McCallum, J.C.
Author_Institution :
Sch. of Phys., Univ. of Melbourne, Parkville, VIC, Australia
Abstract :
The effect of Ni on the kinetics of solid phase epitaxial re-crystallization of amorphous germanium films is investigated with Raman spectroscopy. Both Ni implantation and deposition are employed.
Keywords :
Raman spectra; amorphous semiconductors; elemental semiconductors; germanium; nickel; recrystallisation; semiconductor doping; semiconductor growth; semiconductor thin films; solid phase epitaxial growth; Ge:Ni; Raman spectroscopy; amorphous germanium films; nickel germanide formation; nickel implantation; solid phase epitaxial recrystallisation; Annealing; Films; Germanium; Nickel; Resistance; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699719
