DocumentCode :
2315004
Title :
Thermoelectric properties of ZnO doped with the group 13 elements
Author :
Tsubota, Toshiki ; Ohtaki, Michitaka ; Eguchi, Koichi ; Arai, Hiromichi
Author_Institution :
Dept. of Mater. Sci. & Technol., Kyushu Univ., Fukuoka, Japan
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
240
Lastpage :
243
Abstract :
Investigations on thermoelectric properties of ZnO doped with the group 13 elements revealed that addition of M2O3 (M=Al, Ga, In) to ZnO all increased the electrical conductivity significantly, whereas the absolute values of the Seebeck coefficient moderately decreased. The increase in the electrical conductivity was smaller for doping with the heavier element, being in good agreement with a decrease in the carrier mobility. However, the thermal conductivity was also suppressed by Ga and In doping, particularly in the lower temperature region. Even with the smaller power factor values, the figure of merit of (Zn0.98M0.02)O (M=Ga or In) was equal to that of the Al-doped sample up to ca. 600°C, owing to the suppression of the thermal conductivity
Keywords :
II-VI semiconductors; Seebeck effect; aluminium; carrier mobility; electrical conductivity; gallium; indium; thermal conductivity; zinc compounds; Seebeck coefficient; ZnO:Al; ZnO:Ga; ZnO:In; carrier mobility; doping effects; electrical conductivity; figure of merit; thermal conductivity; thermoelectric properties; Boron alloys; Conducting materials; Inorganic materials; Light scattering; Powders; Reactive power; Temperature; Thermal conductivity; Thermoelectricity; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.667096
Filename :
667096
Link To Document :
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