Title :
TCAD in power device design and optimization
Author :
Fichtner, W. ; Feudel, T. ; Kells, K. ; Lilja, K. ; Litsios, J. ; Muller, S. ; Strecker, N.
Author_Institution :
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
The simulation of power semiconductor devices is faced with several problems that are not usually found in VLSI device modeling: the huge and often complicated structures, the interaction with external circuit environment, the effects of surface phenomena, etc. The large variety of device structures and the lack of compact circuit models makes TCAD very important for the design and optimization of these devices.<>
Keywords :
CAD; optimisation; power electronics; semiconductor device models; TCAD; design; external circuit; optimization; power semiconductor devices; simulation; surface phenomena; Bipolar transistors; Circuit simulation; Design optimization; Insulated gate bipolar transistors; MOSFETs; Power engineering and energy; Power system modeling; Thyristors; Very large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347391
