DocumentCode
2315032
Title
Nuclear magnetic resonance in GaAs-AlGaAs nanostructure devices
Author
Keane, Z.K. ; Godfrey, M.C. ; Fricke, S. ; Burke, AM ; Micolich, A.P. ; Hamilton, AR ; Beere, H.E. ; Ritchie, D.A.
Author_Institution
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
167
Lastpage
168
Abstract
We present preliminary measurements of resistively detected nuclear magnetic resonance (NMR) in GaAs-AlGaAs quantum point contacts (QPC). Nuclear spins in the host crystal are polarized through the hyperfine interaction with carriers near the QPC; this polarization can be detected via the four-terminal resistance and manipulated with a radio-frequency magnetic field.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; hyperfine interactions; nuclear magnetic resonance; polarisation; quantum point contacts; semiconductor heterojunctions; GaAs-AlGaAs; GaAs-AlGaAs nanostructure devices; GaAs-AlGaAs quantum point contacts; NMR; carriers; four-terminal resistance; hyperfine interaction; nuclear magnetic resonance; nuclear spins; polarization; radiofrequency magnetic field; Magnetic resonance imaging; Nuclear measurements; Optical imaging; Optical polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699720
Filename
5699720
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