Title :
Advanced germanium devices: The development of materials and processing
Author :
Leong, M. ; Johnson, B.C. ; Kandasamy, Sivasathivel ; Holland, A. ; Gamble, H. ; Armstrong, M. ; Perova, T. ; McNeil, D.W. ; Rubanov, S. ; McCallum, J.C.
Author_Institution :
Sch. of Phys., Univ. of Melbourne, Parkville, VIC, Australia
Abstract :
The development and optimisation of materials and processes used for germanium metal-oxide-semiconductor devices are investigated. The gate oxide and the source-drain are examined using electrical and optical techniques.
Keywords :
CMOS integrated circuits; dielectric materials; elemental semiconductors; germanium; electrical techniques; gate oxide; germanium devices; material processing; metal-oxide-semiconductor devices; optical techniques; source-drain region; Australia; Contacts; Germanium; Logic gates; MOSFETs; Performance evaluation;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699722
