DocumentCode
2315049
Title
Advanced germanium devices: The development of materials and processing
Author
Leong, M. ; Johnson, B.C. ; Kandasamy, Sivasathivel ; Holland, A. ; Gamble, H. ; Armstrong, M. ; Perova, T. ; McNeil, D.W. ; Rubanov, S. ; McCallum, J.C.
Author_Institution
Sch. of Phys., Univ. of Melbourne, Parkville, VIC, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
171
Lastpage
172
Abstract
The development and optimisation of materials and processes used for germanium metal-oxide-semiconductor devices are investigated. The gate oxide and the source-drain are examined using electrical and optical techniques.
Keywords
CMOS integrated circuits; dielectric materials; elemental semiconductors; germanium; electrical techniques; gate oxide; germanium devices; material processing; metal-oxide-semiconductor devices; optical techniques; source-drain region; Australia; Contacts; Germanium; Logic gates; MOSFETs; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699722
Filename
5699722
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