Title :
An NPN 30 GHz, PNP 32 GHz f/sub T/ complementary bipolar technology
Author :
Onai, T. ; Ohue, E. ; Idei, Y. ; Tanabe, M. ; Shimamoto, H. ; Washio, K. ; Nakamura, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Fully symmetrical complementary bipolar transistors for low power-dissipation and ultra-high-speed LSIs have been integrated in the same chip using a 0.3-/spl mu/m SPOTEC process. Reducing the surface concentration of the boron by oxidation at the surface of boron diffusion layer suppressed upward diffusion of boron in the subcollector of the pnp transistor during epitaxial growth. This enabled thin epitaxial layer growth of both npn and pnp transistors simultaneously. Cutoff frequencies of 30 and 32 GHz were obtained in npn and pnp transistors, respectively. These results showed that the power dissipation is reduced to 1/4 in a complementary active pulldown circuit compared with an ECL circuit.<>
Keywords :
VLSI; bipolar integrated circuits; epitaxial growth; integrated circuit technology; large scale integration; oxidation; 0.3 micron; 30 GHz; 32 GHz; SPOTEC process; boron diffusion; chip integration; complementary active pulldown circuit; complementary bipolar technology; cutoff frequencies; epitaxial growth; npn transistors; oxidation; pnp transistors; power-dissipation; surface boron concentration; symmetrical complementary bipolar transistors; ultra-high-speed LSIs; Bipolar transistors; Boron; Circuits; Cutoff frequency; Epitaxial growth; Epitaxial layers; Etching; Oxidation; Power dissipation; Substrates;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347398
