Conducting filament of the programmed metal electrode amorphous silicon antifuse

Author

Gordon, K.E. ; Wong, R.J.

Author_Institution

QuickLogic Corp., Santa Clara, CA, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

27

Lastpage

30

Abstract

Antifuses in PROM and FPGA applications have used silicon and/or polycrystalline silicon electrodes. Metal electrode antifuses have the lowest resistance and lowest capacitance among programmable interconnect structures. The ViaLink, a metal electrode amorphous silicon antifuse, has been used as a programmable interconnect device for a FPGA. This paper describes for the first time, the composition, structure, electrical characteristics, and temperature dependence of the conducting filament in the programmed TiW electrode amorphous silicon antifuse.<>

Keywords

CMOS integrated circuits; PROM; electrodes; integrated memory circuits; logic arrays; silicon; CMOS technology; FPGA applications; PROM; Si; TiW; ViaLink; conducting filament; electrical characteristics; field programmable gate array; lowest capacitance; lowest resistance; metal electrode amorphous silicon antifuse; metal electrode antifuses; polycrystalline silicon electrodes; programmable interconnect device; programmable interconnect structures; programmed TiW electrode amorphous silicon antifuse; programmed metal electrode amorphous silicon antifuse; temperature dependence; Amorphous silicon; Capacitance; Conducting materials; Dielectrics; Electrodes; Field programmable gate arrays; Manufacturing; Silicides; Thermal stresses; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347406

Filename

347406