• DocumentCode
    2315267
  • Title

    Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics

  • Author

    Singh, Sirendra ; Jasieniak, Jacek ; Bown, Mark

  • Author_Institution
    Mater. Sci. & Eng., CSIRO, Melbourne, VIC, Australia
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    191
  • Lastpage
    192
  • Abstract
    We report on the use of sol-gel-processed amorphous oxides based on a (ZnxSny)Oz composition to develop thin-film transistors (TFTs) with electron mobility exceeding 1 cm2/Vs and high on/off ratios (>;106). These devices are aided by a high K dielectric developed by CSIRO, which enables reduced operating voltages to be achieved.
  • Keywords
    II-VI semiconductors; amorphous semiconductors; electron mobility; high-k dielectric thin films; semiconductor thin films; sol-gel processing; thin film transistors; tin compounds; wide band gap semiconductors; zinc compounds; (ZnxSny)Oz; electron mobility; high K dielectric; high performance metal oxide thin-film transistors; low-cost electronics; on-off ratio; sol-gel processing; transparent electronics; Dielectrics; Logic gates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
  • Conference_Location
    Canberra, ACT
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-7334-2
  • Electronic_ISBN
    1097-2137
  • Type

    conf

  • DOI
    10.1109/COMMAD.2010.5699733
  • Filename
    5699733
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2315267