DocumentCode
2315275
Title
NOR virtual ground (NVG)-a new scaling concept for very high density flash EEPROM and its implementation in a 0.5 um process
Author
Bergemont, A. ; Haggag, H. ; Anderson, L. ; Shacham, E. ; Wolstenholme, G.
Author_Institution
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
15
Lastpage
18
Abstract
A new NOR virtual ground flash cell array concept is introduced. A 2.4 um/sup 2/ cell size based on a 0.5 um process is realized, which is a 35% cell size reduction compared with the conventional NOR cell.<>
Keywords
CMOS integrated circuits; EPROM; NOR circuits; integrated memory circuits; logic circuits; 0.5 mum; 0.5 um process; 2.4 mum; NOR virtual ground flash cell array; cell size reduction; conventional NOR cell; scaling concept; very high density flash EEPROM; Avalanche breakdown; Charge carrier processes; Contacts; Decoding; EPROM; Lead compounds; Variable structure systems; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347409
Filename
347409
Link To Document