Can insulating the gates lead us to stable modulation-doped hole quantum devices?

Author

Waddington, D. ; Burke, A.M. ; Fricke, S. ; Tan, H.H. ; Jagadish, C. ; Hamilton, A.R. ; Trunov, K. ; Reuter, D. ; Wieck, A.D. ; Micolich, A.P.

Author_Institution

Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

199

Lastpage

200

Abstract

We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of comparative studies of devices made with and without oxide-insulated gates to establish whether this leads to a significant enhancement in device stability and reduced gate hysteresis and noise.

Keywords

III-V semiconductors; MIS devices; alumina; aluminium compounds; atomic layer deposition; gallium arsenide; hafnium compounds; insulating thin films; ohmic contacts; semiconductor heterojunctions; Al₂O₃-AlGaAs-GaAs; HfO₂-AlGaAs-GaAs; atomic layer deposition; device stability; gate hysteresis; modulation-doped heterostructures; noise; ohmic contacts; oxide-insulated gates; quantum devices; thin oxide layer; Fabrication; Gallium arsenide; Logic gates; Metals; Noise; Ohmic contacts; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699738

Filename

5699738