DocumentCode :
2315348
Title :
A 213 GHz AlInAs/GaInAs/InP HEMT MMIC oscillator
Author :
Rosenbaum, S.E. ; Jelloian, L.M. ; Brown, A.S. ; Thompson, M.A. ; Matloubian, M. ; Larson, L.E. ; Lohr, R.F. ; Kormanyos, B.K. ; Rebeiz, G.M. ; Katchi, L.P.B.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fYear :
1993
fDate :
5-8 Dec. 1993
Firstpage :
924
Lastpage :
926
Abstract :
We have fabricated submillimeter-wave MMIC oscillator circuits using AlInAs/GaInAs HEMTs on InP substrates, which have resulted in oscillators operating at fundamental frequencies of 155 and 213 GHz. These results are believed to be the highest frequency three-terminal oscillators reported to date.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; indium compounds; microwave oscillators; submillimetre wave devices; 155 GHz; 213 GHz; AlInAs-GaInAs-InP; AlInAs/GaInAs HEMTs; AlInAs/GaInAs/InP HEMT MMIC oscillator; InP; InP substrates; fundamental frequencies; submillimeter-wave MMIC oscillator circuits; three-terminal oscillators; Antenna measurements; Atherosclerosis; Contracts; HEMTs; Indium phosphide; Integrated circuit technology; Laboratories; MMICs; Oscillators; Planar arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-1450-6
Type :
conf
DOI :
10.1109/IEDM.1993.347470
Filename :
347470
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2315348
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