Title :
Fabrication of III–V semiconductor core-shell nanowires by SA-MOVPE and their device applications
Author :
Fukui, T. ; Tomioka, K. ; Hara, S. ; Hiruma, K. ; Motohisa, J.
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar cells. We also demonstrate III-V semiconductor nano-wires grown on Si (111) substrates.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; nanofabrication; nanowires; semiconductor growth; semiconductor lasers; solar cells; vapour phase epitaxial growth; GaAs-AlGaAs; GaAs-GaAsP; GaAs-Si; InAs-Si; InP; InP-InAs-InP; SA-MOVPE; Si; Si (111) substrate; core-shell nanowire photoexcited lasers; core-shell pn junction solar cells; lll-V semiconductor core-shell nanowires; lll-V substrate; selective area metalorganic vapor phase epitaxy; Crystals; Epitaxial growth; Irrigation; Physics; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699743
