Fabrication of III–V semiconductor core-shell nanowires by SA-MOVPE and their device applications

Author

Fukui, T. ; Tomioka, K. ; Hara, S. ; Hiruma, K. ; Motohisa, J.

Author_Institution

Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

209

Lastpage

210

Abstract

We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar cells. We also demonstrate III-V semiconductor nano-wires grown on Si (111) substrates.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; nanofabrication; nanowires; semiconductor growth; semiconductor lasers; solar cells; vapour phase epitaxial growth; GaAs-AlGaAs; GaAs-GaAsP; GaAs-Si; InAs-Si; InP; InP-InAs-InP; SA-MOVPE; Si; Si (111) substrate; core-shell nanowire photoexcited lasers; core-shell pn junction solar cells; lll-V semiconductor core-shell nanowires; lll-V substrate; selective area metalorganic vapor phase epitaxy; Crystals; Epitaxial growth; Irrigation; Physics; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699743

Filename

5699743