Title :
Photoluminescence study of optically trapped InP semiconductor nanowires
Author :
Fan Wang ; Wen Jun Toe ; Paiman, Suriati ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, C. ; Reece, Peter J.
Author_Institution :
School of Physics, The University of New South Wales, Sydney 2052, AUSTRALIA
Abstract :
We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.
Keywords :
III-V semiconductors; indium compounds; nanowires; photoluminescence; polymorphism; radiation pressure; radiation quenching; semiconductor quantum wires; InP; band-edge emission; gradient force optical tweezers; indium phosphide semiconductor nanowires; mixed-phase crystal polytypes; photoluminescence; quenching effects; size 1 mum to 10 mum; wurtzite nanowires; zinc blende nanowires;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699744
