Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTs

Author

Yuling Li ; Liang, Yung C. ; Samudra, Ganesh S. ; Huolin Huang ; Yee-Chia Yeo

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2013

fDate

22-25 April 2013

Firstpage

521

Lastpage

524

Abstract

The slow recovery in pulsed drain current in AlGaN/GaN power HEMTs caused by high voltage stress during off-state becomes an important research topic in power electronic switching applications. To further investigate this phenomenon, the influence of gate drive towards the drain current recovery is investigated in this paper. The gate drive current can influence the de-trapping process along the AlGaN device surface, which then in turn affecting the 2DEG conductivity for the on-state current recovery. The analysis is made through the physical model and 2D T-CAD Sentaurus simulations, and verified by the experimental measurement. The proposed work is able to assist engineers in gate drive design for AlGaN/GaN power HEMT devices for fast pulsed current recovery in high-frequency switching.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power semiconductor devices; wide band gap semiconductors; 2D T-CAD Sentaurus simulation; AlGaN-GaN; fast pulsed current recovery; gate drive; high frequency switching; power HEMT; power electronic switching; pulsed current collapse recovery; pulsed drain current; voltage stress; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; Logic gates; MODFETs; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems (PEDS), 2013 IEEE 10th International Conference on

Conference_Location

Kitakyushu

ISSN

2164-5256

Print_ISBN

978-1-4673-1790-0

Electronic_ISBN

2164-5256

Type

conf

DOI

10.1109/PEDS.2013.6527074

Filename

6527074