DocumentCode
2315518
Title
SOI promises for speed, energy and memory
Author
Cristoloveanu, Sorin
Author_Institution
Inst. of Microelectron., Electromagn. & Photonics, Grenoble Inst. of Technol., Grenoble, France
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
219
Lastpage
220
Abstract
The current status, future trends and economic implications of SOI technology are reviewed. SOI offers ample room for ultimate scaling, speed improvement, power saving and innovative device concepts. Several technology boosters, infusing further gains in performance and miniaturization, will be discussed. The capacitorless single-transistor DRAM will be presented as a typical example of diversified functionality in SOI devices and circuits.
Keywords
CMOS memory circuits; DRAM chips; silicon-on-insulator; SOI circuits; SOI devices; SOI technology; capacitorless single-transistor DRAM; diversified functionality; innovative device concepts; memory; miniaturization; performance; power saving; speed improvement; technology boosters; ultimate scaling; Doping;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699749
Filename
5699749
Link To Document