Title :
SOI promises for speed, energy and memory
Author :
Cristoloveanu, Sorin
Author_Institution :
Inst. of Microelectron., Electromagn. & Photonics, Grenoble Inst. of Technol., Grenoble, France
Abstract :
The current status, future trends and economic implications of SOI technology are reviewed. SOI offers ample room for ultimate scaling, speed improvement, power saving and innovative device concepts. Several technology boosters, infusing further gains in performance and miniaturization, will be discussed. The capacitorless single-transistor DRAM will be presented as a typical example of diversified functionality in SOI devices and circuits.
Keywords :
CMOS memory circuits; DRAM chips; silicon-on-insulator; SOI circuits; SOI devices; SOI technology; capacitorless single-transistor DRAM; diversified functionality; innovative device concepts; memory; miniaturization; performance; power saving; speed improvement; technology boosters; ultimate scaling; Doping;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699749
