DocumentCode
2315601
Title
Comparison between implanted boron and phosphorus in silicon wafers.
Author
Burgess, J.E. ; Johnson, B.C. ; Villis, B.J. ; McCallum, J.C. ; Charnvanichborikarn, S. ; Wong-Leung, J. ; Williams, J.S.
Author_Institution
Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
225
Lastpage
226
Abstract
The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presence of B and P dopants is considered. As expected, boron is found to reduce the W-line. Phosphorous also reduces the luminescence but to a lesser extent.
Keywords
annealing; boron; elemental semiconductors; interstitials; ion implantation; phosphorus; photoluminescence; semiconductor doping; silicon; B dopants; P dopants; Si:B; Si:P; W-line reduction; annealing temperatures; boron implantation; defect evolution; ion implantation; luminescence reduction; phosphorus implantation; photoluminescence; self-interstitials; silicon wafers; Luminescence; Phonons; Rapid thermal annealing; Silicon; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699752
Filename
5699752
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