High-temperature oxidation behavior of PbTe and oxidation-resistive glass coating

Author

Chen, Lidong ; Goto, Takashi ; Tu, Rong ; Hirai, Toshio

Author_Institution

Inst. of Mater. Res., Tohoku Univ., Sendai, Japan

fYear

1997

fDate

26-29 Aug 1997

Firstpage

251

Lastpage

254

Abstract

Oxidation of lead telluride (PbTe) is a serious issue for thermoelectric applications. In the present study, the oxidation behavior of PbTe was studied at oxygen partial pressures of 10 Pa to 0.1 MPa in the temperature range between 700 and 900 K. At moderately low oxygen partial pressures and high temperatures, mass loss was observed and the oxide layers (Pb₃TeO₅ or Pb₅TeO ₇) formed on the PbTe surface. At high oxygen partial pressures and low temperatures, mass gain was observed and PbTeO₃ or Pb₂TeO₄/PbTeO₃ oxide layers formed on the PbTe surface. When the temperature was higher than 819 K, PbTeO₃ melted and dropped down from the specimen. Oxidation-resistive glasses were coated on the PbTe surface. The glass-coated PbTe showed excellent oxidation resistance showing no mass change at 773 K

Keywords

IV-VI semiconductors; lead compounds; oxidation; thermoelectricity; 10 Pa to 0.1 MPa; 700 to 900 K; O₂ partial pressure dependence; Pb₂TeO₄-PbTeO₃; Pb₃TeO₅; Pb₅TeO₇; PbTe; PbTeO₃; mass gain; mass loss; oxidation behavior; oxidation resistance; oxidation-resistive glass coating; oxide layers; temperature dependence; thermoelectric applications; Coatings; Glass; Lead; Oxidation; Power generation; Surface resistance; Tellurium; Temperature distribution; Thermoelectricity; Waste heat;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Conference_Location

Dresden

ISSN

1094-2734

Print_ISBN

0-7803-4057-4

Type

conf

DOI

10.1109/ICT.1997.667101

Filename

667101