DocumentCode
2315887
Title
Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells
Author
Hall, C.R. ; Dao, Lv ; Koike, K. ; Sasa, S. ; Tan, H.H. ; Inoue, M. ; Yano, M. ; Jagadish, C. ; Davis, J.A.
Author_Institution
Centre for Atom Opt. & Ultrafast Spectrosc., Swinburne Univ. of Technol., Hawthorn, VIC, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
45
Lastpage
46
Abstract
We reveal the dynamics of carrier-induced screening of the internal electric field in ZnO quantum wells. By controlling the potential profile of the quantum wells we demonstrate the ability to tune the excited state lifetimes.
Keywords
II-VI semiconductors; excited states; quantum confined Stark effect; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; ZnO-ZnMgO; carrier-induced screening; excited state lifetimes; internal electric field; quantum confined Stark effect; quantum wells; Delay; Legged locomotion; Photonics; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699771
Filename
5699771
Link To Document