Title :
Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
Author :
Du, S.C. ; Fu, L. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Australian Centre for Microscopy & Microanalysis, Univ. of Sydney, Sydney, NSW, Australia
Abstract :
In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.
Keywords :
III-V semiconductors; MOCVD; X-ray photoelectron spectra; aluminium compounds; chemical interdiffusion; dielectric thin films; encapsulation; energy gap; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; surface chemistry; AlInGaAs-InGaAs-SiO2; X-ray photoelectron spectroscopy; band gap; dielectric capping layer; encapsulating layers; interdiffusion; interfacial reaction; intermixing mechanism; metalorganic chemical vapour deposition; photoluminescence; quantum well structures; Annealing; Gallium; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Photonics; Semiconductor device measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699772
