Study of intermixing mechanism in AlInGaAs/InGaAs quantum well

Author

Du, S.C. ; Fu, L. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Australian Centre for Microscopy & Microanalysis, Univ. of Sydney, Sydney, NSW, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

47

Lastpage

48

Abstract

In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.

Keywords

III-V semiconductors; MOCVD; X-ray photoelectron spectra; aluminium compounds; chemical interdiffusion; dielectric thin films; encapsulation; energy gap; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; surface chemistry; AlInGaAs-InGaAs-SiO₂; X-ray photoelectron spectroscopy; band gap; dielectric capping layer; encapsulating layers; interdiffusion; interfacial reaction; intermixing mechanism; metalorganic chemical vapour deposition; photoluminescence; quantum well structures; Annealing; Gallium; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Photonics; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699772

Filename

5699772