• DocumentCode
    2315915
  • Title

    Optical and THz characterization of p-In0.64Al0.36Sb for antenna application

  • Author

    Jeong, Hoonill ; Jeong, Jihoon ; Hong, Youngbin ; Jho, Young-Dahl ; Shin, S.H. ; Kim, S.Y. ; Lee, J.I. ; Song, Jin-Dong

  • Author_Institution
    Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
  • fYear
    2009
  • fDate
    21-25 Sept. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Time-resolved photoreflectance was performed simultaneously with THz radiation measurements in a series of p-doped InAl0.36Sb. Carrier decay time can be as short as 350 fs depending on the doping density, which showed correlation with THz emission features.
  • Keywords
    indium compounds; photoconducting materials; photoreflectance; semiconductor device measurement; semiconductor doping; semiconductor growth; time resolved spectroscopy; In0.64Al0.36Sb; THz characterization; THz radiation measurements; antenna application; time-resolved photoreflectance; Antenna measurements; Doping; Electron mobility; Electron optics; FETs; Gallium arsenide; Integrated optics; Optical materials; Principal component analysis; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
  • Conference_Location
    Busan
  • Print_ISBN
    978-1-4244-5416-7
  • Electronic_ISBN
    978-1-4244-5417-4
  • Type

    conf

  • DOI
    10.1109/ICIMW.2009.5324683
  • Filename
    5324683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2315915