Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing

Author

McKerracher, I. ; Wong-Leung, J. ; Jolley, G. ; Fu, L. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

49

Lastpage

50

Abstract

Quantum dot intermixing is a post-growth approach to tuning optoelectronic devices. SiO₂ capping layers can enhance these effects through impurity-free vacancy disordering, whereas TiO₂ caps can decrease intermixing. In this study, multi-colour quantum dot infrared photodetectors were fabricated through selective intermixing and four different encapsulants were investigated.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; InGaAs-GaAs; InGaAs-GaAs quantum dot infrared photodetectors; encapsulants; impurity-free vacancy disordering; multicolour quantum dot infrared photodetectors; optoelectronic devices; post-growth approach; quantum dot intermixing; selective-area intermixing; silica capping layers; spectral tuning; titania caps; Annealing; Gallium arsenide; Nickel;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699773

Filename

5699773