Title :
Comparative study on THz radiation from various semiconductors
Author :
Hong, Youngbin ; Jeong, Jihoon ; Jeong, Hoonil ; Jho, Young-Dahl ; Song, J.D. ; Shin, S.H. ; Kim, S.Y.
Author_Institution :
Dep. of Info. & Comm., Gwangju Inst. of Sci.&Tech., Gwangju, South Korea
Abstract :
We have measured THz radiation from various semiconductor groups: InGaSb, GaAsSb, InAsSb, InAlSb, InSb, InAs, and InGaAs. The InAs series was the most intense radiation source whereas GaAsSb was the weakest one. In terms of the emission time, InGaAs (GaAsSb) was the fastest (slowest) material.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor devices; terahertz wave devices; terahertz wave generation; GaAsSb; InAlSb; InAs; InAs series; InAsSb; InGaAs; InGaSb; InSb; THz radiation; emission time; intense radiation source; semiconductors; Frequency; Indium gallium arsenide; Optical materials; Optical pulses; Phonons; Plasmons; Semiconductor lasers; Semiconductor materials; Surface emitting lasers; Underwater acoustics;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324685
