DocumentCode :
2316002
Title :
Controlled lateral growth of silica nanowire
Author :
Kim, Tea-Hyun ; Shalav, Avi ; Elliman, Robert G.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
59
Lastpage :
60
Abstract :
This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.
Keywords :
amorphous state; coatings; multilayers; nanofabrication; nanowires; oxidation; silicon compounds; Si active oxidation; SiO2; amorphous silica nanowires; complex multilayered core shell structures; controlled lateral growth; secondary coating; vapour precursor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699779
Filename :
5699779
Link To Document :
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