• DocumentCode
    2316002
  • Title

    Controlled lateral growth of silica nanowire

  • Author

    Kim, Tea-Hyun ; Shalav, Avi ; Elliman, Robert G.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    This study investigates the controlled lateral growth of amorphous silica nanowires using the Si active oxidation as the dominant SiO vapour precursor for nanowire growth. The development of complex multi-layered core shell nanowire structures using a combination of both active Si oxidation and secondary coating techniques is also demonstrated.
  • Keywords
    amorphous state; coatings; multilayers; nanofabrication; nanowires; oxidation; silicon compounds; Si active oxidation; SiO2; amorphous silica nanowires; complex multilayered core shell structures; controlled lateral growth; secondary coating; vapour precursor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
  • Conference_Location
    Canberra, ACT
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-7334-2
  • Electronic_ISBN
    1097-2137
  • Type

    conf

  • DOI
    10.1109/COMMAD.2010.5699779
  • Filename
    5699779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2316002