Title :
InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation
Author :
Ramesh, V. ; Gao, Q. ; Tan, H.H. ; Paiman, S. ; Guo, Y.N. ; Zou, J. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition (MOCVD). The grown nanowires are distributed uniformly and are vertical to the substrate. The coreshell nanowires have been structurally characterised by scanning electron microscopy and transmission electron microscopy.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; nanofabrication; nanowires; scanning electron microscopy; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wires; transmission electron microscopy; InP-InGaAs; coreshell nanowire heterostructures; metal organic chemical vapour deposition; scanning electron microscopy; transmission electron microscopy; Indium gallium arsenide; Indium phosphide; Metals; Surface morphology;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699792
