Title :
Photoluminescense of B and P doped Si nanocrystals fabricated by ion implantation
Author :
Ryan, Peter ; Johnson, B.C. ; McCallum, J.C.
Author_Institution :
Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia
Abstract :
The effect of boron and phosphorous doping and co-doping on the optical properties of silicon nanocrystals formed in fused-silica by ion implantation is being studied. Boron-phosphorus pairs in silicon nanocrystals are of interest for possible applications in optical quantum computing.
Keywords :
Raman spectra; boron; elemental semiconductors; ion implantation; nanofabrication; nanostructured materials; phosphorus; photoluminescence; semiconductor doping; semiconductor growth; silicon; Si:B,P; doping; fused silica; ion implantation; nanocrystals; optical properties; optical quantum computing; photoluminescence; Educational institutions;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699793
