DocumentCode
2316243
Title
Photoluminescense of B and P doped Si nanocrystals fabricated by ion implantation
Author
Ryan, Peter ; Johnson, B.C. ; McCallum, J.C.
Author_Institution
Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
85
Lastpage
86
Abstract
The effect of boron and phosphorous doping and co-doping on the optical properties of silicon nanocrystals formed in fused-silica by ion implantation is being studied. Boron-phosphorus pairs in silicon nanocrystals are of interest for possible applications in optical quantum computing.
Keywords
Raman spectra; boron; elemental semiconductors; ion implantation; nanofabrication; nanostructured materials; phosphorus; photoluminescence; semiconductor doping; semiconductor growth; silicon; Si:B,P; doping; fused silica; ion implantation; nanocrystals; optical properties; optical quantum computing; photoluminescence; Educational institutions;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699793
Filename
5699793
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