DocumentCode
2316271
Title
Terahertz absorption in InAs/GaSb type-II superlattcies
Author
Li, Lily L. ; Zhang, J. ; Shi, Y.L. ; Qin, H. ; Xu, W.
Author_Institution
Key Lab. of Mater. Phys., Chinese Acad. of Sci., Hefei, China
fYear
2009
fDate
21-25 Sept. 2009
Firstpage
1
Lastpage
2
Abstract
We theoretically demonstrate that it is possible to realize terahertz (THz) fundamental band-gap in InAs/GaSb type-II superlattices (SLs). The presence of such THz band-gap can result in a strong cut-off of optical absorption at THz bandwidth for relatively high-temperatures. This study is pertinent to the application of InAs/GaSb type-II SLs as optoelectronic devices such as THz photodetectors.
Keywords
III-V semiconductors; energy gap; gallium compounds; indium compounds; photodetectors; semiconductor superlattices; terahertz wave spectra; InAs-GaSb; band-gap; optical absorption; optoelectronic devices; terahertz absorption; terahertz photodetectors; type-II superlattices; Absorption; Bandwidth; Biomedical optical imaging; Charge carrier processes; Electrons; Laser sintering; Optical sensors; Photonic band gap; Physics; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location
Busan
Print_ISBN
978-1-4244-5416-7
Electronic_ISBN
978-1-4244-5417-4
Type
conf
DOI
10.1109/ICIMW.2009.5324707
Filename
5324707
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