DocumentCode
2316420
Title
10 Gbit/s avalanche photodiodes applicable to nonhermetic receiver modules
Author
Tanaka, S. ; Fujisaki, S. ; Matsuoka, Y. ; Tsuchiya, T. ; Tsuji, S. ; Toyonaka, T. ; Kamiyama, H.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear
2003
fDate
23-28 March 2003
Firstpage
67
Abstract
Highly reliable InAlAs-APDs have been developed for highly sensitive 10 Gbit/s receivers. Estimated lifetime is as long as 1,000,000 hours at 75°C, and a stable operation in a dump-heat ambient (138°C, 85%RH) was also demonstrated.
Keywords
III-V semiconductors; avalanche photodiodes; indium compounds; optical fabrication; optical receivers; 10 Gbit/s; 1000000 hours; 138 C; 75 C; InAlAs; InAlAs-APDs; avalanche photodiodes; dump-heat ambient temperature; nonhermetic receiver modules; Aging; Dark current; Epitaxial growth; Indium compounds; Indium gallium arsenide; Indium phosphide; Nitrogen; Optical receivers; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN
1-55752-746-6
Type
conf
DOI
10.1109/OFC.2003.1247494
Filename
1247494
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