DocumentCode :
2316537
Title :
Semiconductor all-optical buffers using quantum dots in resonator structures
Author :
Ku, P. ; Chang-Hasnain, C. ; Kim, J. ; Chuang, S.
Author_Institution :
California Univ., Berkeley, CA, USA
fYear :
2003
fDate :
23-28 March 2003
Firstpage :
76
Abstract :
A variable semiconductor all-optical buffer is proposed. The buffer uses electromagnetically-induced transparency in quantum dots. With resonator structures, the performance can be further improved. A device storing 168 bits in a 10 Gb/s system can be obtained at room temperature.
Keywords :
optical information processing; optical resonators; self-induced transparency; semiconductor quantum dots; semiconductor storage; 10 Gbit/s; 293 to 298 K; electromagnetically-induced transparency buffer; quantum dots; resonator structures; room temperature; variable semiconductor all-optical buffers; Bonding; Lenses; Microoptics; Optical buffering; Optical resonators; Quantum dots; Silicon; Surface-mount technology; US Department of Energy; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
Type :
conf
DOI :
10.1109/OFC.2003.1247501
Filename :
1247501
Link To Document :
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