Title :
Development of bolometer-type uncooled THz-QVGA sensor and camera
Author :
Oda, Naoki ; Sano, Masahiko ; Yoneyama, Hajime ; Sasaki, Tokuhito ; Kurashina, Seiji ; Hosako, Iwao ; Sekine, Norihiko ; Fukunaga, Kaori ; Ogawa, Yuichi ; Komatsubara, Shigeyuki ; Sudoh, Takayuki ; Irie, Tomoko ; Atake, Hiroshi ; Ikeda, Yoshifumi
Author_Institution :
Guidance & Electro-Opt. Div., NEC, Fuchu, Japan
Abstract :
Bolometer-type uncooled infrared QVGAs (Quarter Video Graphics Arrays, namely, 320times240) were modified to improve their sensitivities at 3 THz. High transmission materials were investigated and it is found that high resistivity silicon with anti-reflection coating of Parylene or Silicon Dioxide is suitable. Using this material, THz lens was fabricated and handy THz camera which operates at TV frame rate was also fabricated. Using the THz camera, NEP (Noise Equivalent Power) of uncooled THz-QVGA sensor was characterized at several wavelengths from 3 to 270 mum. The THz camera showed THz imageries of antigen-antibody reaction without labeling molecules, which indicate that THz detection technology can be promising for detecting proteins.
Keywords :
antireflection coatings; biosensors; bolometers; focal planes; lenses; proteins; silicon compounds; terahertz wave detectors; terahertz wave imaging; Quarter Video Graphics Arrays; SiO2; THz detection technology; antigen-antibody reaction; antireflection coating; bolometer-type uncooled infrared camera; bolometer-type uncooled terahertz-QVGA sensor; frequency 3 THz; handy terahertz camera fabrication; high resistivity silicon; high transmission materials; noise equivalent power; parylene; protein detection; silicon dioxide; terahertz imageries; terahertz lens fabrication; wavelength 3 mum to 270 mum; Cameras; Coatings; Conductivity; Graphics; Labeling; Lenses; Optical materials; Sensor phenomena and characterization; Silicon compounds; TV;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324729
