• DocumentCode
    2316689
  • Title

    Terahertz nanoresonators: Control and measurements

  • Author

    Kim, DaiSik

  • Author_Institution
    Dept. of Phys. & Astron., Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2009
  • fDate
    21-25 Sept. 2009
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    We discuss a new and exciting area whereby terahertz science and technology meet nano-world and thin-film technology. We first show that a lambda/30,000 nanogap on metal film can efficiently transmit terahertz electromagnetic waves whose wavelengths are in the millimeter range. It was found that the transmittance continues to increase as the frequency decreases with a dependence of 1/f. The field enhancement reaches the value of ~1000 at 0.1 THz. The accumulation of charges at metal edges via light-induced currents creates a large horizontal electric field, which in effect attracts the incoming light, while the magnetic field enhancement is only orders of unity. Turning into two-dimensional nanoresonator, we design nano-antenna arrays that allow perfect transmission. Nanoresonators on VO2 thin films help amplify the available dynamic range for extinction and transmission when it undergoes insulator-metal phase transition.
  • Keywords
    antenna arrays; nanotechnology; resonators; submillimetre wave devices; submillimetre wave propagation; horizontal electric field; insulator-metal phase transition; magnetic field enhancement; nanoantenna arrays; terahertz electromagnetic waves; terahertz nanoresonators; thin-film technology; two-dimensional nanoresonator; Dynamic range; Electromagnetic measurements; Electromagnetic scattering; Frequency; Millimeter wave technology; Submillimeter wave measurements; Submillimeter wave technology; Transistors; Turning; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
  • Conference_Location
    Busan
  • Print_ISBN
    978-1-4244-5416-7
  • Electronic_ISBN
    978-1-4244-5417-4
  • Type

    conf

  • DOI
    10.1109/ICIMW.2009.5324735
  • Filename
    5324735