The effects of local disorder on the electronic structures of amorphous semiconductor GaAs

Author

Wang, L. ; Chen, X.S. ; Huang, Y. ; Lu, W. ; Zhao, J.J.

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

The structure of amorphous compound semiconductor has been constructed successfully by ldquocontinuous random networksrdquo (CRN). Based on the first-principles calculations, the effects of different local disorder on density of states are studied in detail. The results show that the wrong bonds mainly have effect on the deeper energy band and introduce new electron states, and the dangling bonds mainly influence on the edge of energy gap and provide new electron states. In addition, anion and cation disorders (wrong bonds or dangling bonds) have distinguishing effect on density of states.

Keywords

III-V semiconductors; amorphous semiconductors; defect states; electronic density of states; electronic structure; gallium arsenide; GaAs; amorphous semiconductor; anion disorders; cation disorders; continuous random networks; dangling bonds; density of states; electron states; electronic structures; energy band; energy gap; first-principles calculations; local disorder; Amorphous materials; Amorphous semiconductors; Chemicals; Electrons; Gallium arsenide; Laboratories; Materials science and technology; Optical materials; Physics; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5324742

Filename

5324742