DocumentCode :
2316918
Title :
Gate-level process variation offset technique by using dual voltage supplies to achieve near-threshold energy efficient operation
Author :
Devlin, Benjamin ; Keda, Makoto ; Asada, Kunihiro
Author_Institution :
Dept. of Electron. Eng., Univ. of Tokyo, Tokyo, Japan
fYear :
2012
fDate :
18-20 April 2012
Firstpage :
1
Lastpage :
3
Abstract :
We present a low overhead technique that can be used to offset both large systematic and random process delay variation in the near-threshold voltage operation region. We present an analysis of this this technique applied to a 65nm CMOS self synchronous FPGA that is capable of operation from 2.0V to 0.37V. By using dual voltage supplies, we can offset gate-level pipeline stages that show large delay variation, to achieve energy savings per operation of up to 102x for a 200 stage pipeline.
Keywords :
CMOS logic circuits; delays; field programmable gate arrays; random processes; CMOS self-synchronous FPGA; dual voltage supplies; energy savings; gate-level process variation offset technique; low overhead technique; near-threshold energy efficient operation; near-threshold voltage operation region; offset gate-level pipeline stages; random process delay variation; size 65 nm; systematic process delay variation; voltage 2.0 V to 0.37 V; Delay; Energy efficiency; Logic gates; Pipelines; Random access memory; Synchronization; Systematics; delay variation; energy efficient; near-threshold operation; self synchronous; voltage scaling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Cool Chips XV (COOL Chips), 2012 IEEE
Conference_Location :
Yokohama
Print_ISBN :
978-1-4673-1201-1
Electronic_ISBN :
978-1-4673-1200-4
Type :
conf
DOI :
10.1109/COOLChips.2012.6216585
Filename :
6216585
Link To Document :
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