• DocumentCode
    2316918
  • Title

    Gate-level process variation offset technique by using dual voltage supplies to achieve near-threshold energy efficient operation

  • Author

    Devlin, Benjamin ; Keda, Makoto ; Asada, Kunihiro

  • Author_Institution
    Dept. of Electron. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2012
  • fDate
    18-20 April 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present a low overhead technique that can be used to offset both large systematic and random process delay variation in the near-threshold voltage operation region. We present an analysis of this this technique applied to a 65nm CMOS self synchronous FPGA that is capable of operation from 2.0V to 0.37V. By using dual voltage supplies, we can offset gate-level pipeline stages that show large delay variation, to achieve energy savings per operation of up to 102x for a 200 stage pipeline.
  • Keywords
    CMOS logic circuits; delays; field programmable gate arrays; random processes; CMOS self-synchronous FPGA; dual voltage supplies; energy savings; gate-level process variation offset technique; low overhead technique; near-threshold energy efficient operation; near-threshold voltage operation region; offset gate-level pipeline stages; random process delay variation; size 65 nm; systematic process delay variation; voltage 2.0 V to 0.37 V; Delay; Energy efficiency; Logic gates; Pipelines; Random access memory; Synchronization; Systematics; delay variation; energy efficient; near-threshold operation; self synchronous; voltage scaling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Cool Chips XV (COOL Chips), 2012 IEEE
  • Conference_Location
    Yokohama
  • Print_ISBN
    978-1-4673-1201-1
  • Electronic_ISBN
    978-1-4673-1200-4
  • Type

    conf

  • DOI
    10.1109/COOLChips.2012.6216585
  • Filename
    6216585