High-reliability and high-speed design of 1Mb CMOS SRAM with 0.5/spl mu/m devices
Author :
Hayakawa, S. ; Kakumu, M. ; Aono, A. ; Yoshida, T. ; Sato, K. ; Noguchu ; Ohtani, T. ; Nakayama, T. ; Asami, T. ; Morita, S. ; Kinugawa, M. ; Matsunaga, J. ; Ochit
Author_Institution :
Toshiba Corp.
fYear :
1989
fDate :
25-27 May 1989
Firstpage :
31
Lastpage :
32
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1989. Digest of Technical Papers., 1989 Symposium on
