DocumentCode :
2317241
Title :
A latch-up like new failure mechanism for high density cmos dynamic RAM´s - hysteresis in operating Vcc range
Author :
Furuyama, T. ; Ishiuchi, H. ; Tanaka, H. ; Watanabe, Y. ; Kohyama, Y. ; Kiroura ; Muraoka, K. ; Sugiura, S. ; Natori, K.
Author_Institution :
Toshiba Corporation
fYear :
1989
fDate :
25-27 May 1989
Firstpage :
33
Lastpage :
34
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1989. Digest of Technical Papers., 1989 Symposium on
Conference_Location :
Kyoto, Japan
Type :
conf
DOI :
10.1109/VLSIC.1989.1037475
Filename :
1037475
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2317241
