Title :
High-resolution XRD analysis and device characteristics of InAs/GaSb strained-layer superlattice photodetector
Author :
Kim, J.O. ; Shin, H.W. ; Choe, J.W. ; Lee, S.J. ; Kim, C.S. ; Noh, S.K.
Abstract :
Type-II InAs/GaSb (8/8-ML) strained-layer superlattice (SLS) were grown, and analyzed by high-resolution X-ray diffraction (XRD). The satellite peaks of XRD show a strain transition from compressive to tensile. The responsivity of discrete SLS photodetectors (P=150) shows a cutoff wavelength of ~5 mum, and the temperature dependence gives an activation energy of 275 meV corresponding to the transition energy of HH1-CB.
Keywords :
III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; photodetectors; semiconductor growth; semiconductor superlattices; InAs-GaSb; X-ray diffraction; device characteristics; discrete strained-layer superlattice photodetector; high-resolution XRD analysis; temperature dependence; Detectors; Laser sintering; Photodetectors; Satellites; Spectroscopy; Strain measurement; Superlattices; Temperature dependence; Tensile strain; X-ray scattering;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324773
