DocumentCode :
2317270
Title :
Computation of electrostatic field around a partially wet insulator surface through numerical techniques and simulation
Author :
Basappa, Prathap ; Williams, Michael L. ; Agarwal, Krish
Author_Institution :
Dept. of Eng., Norfolk State Univ., VA, USA
fYear :
2004
fDate :
19-22 Sept. 2004
Firstpage :
292
Lastpage :
295
Abstract :
Insulators in actual service conditions are polluted due to ambient operating conditions. Due to leakage currents dry bands can be formed on the surface of the insulators. Distortion of the potentials would occur by the existence of both a wet polluted band and a dry band in presence of air. In this work a rotationally symmetric approximation of the insulator is considered with varying lengths of dry band and wet bands. Simulations are carried out with different values of resistivities for wet and dry bands and different ratios of wet and dry band dimensions. Finite difference code was developed to calculate the potential & stress distributions. Two configurations were considered. In one the dry band is maintained next to high voltage electrode and in the other dry band is maintained next to grounded electrode. The details of simulation, the configurations considered our results and conclusions are presented.
Keywords :
distortion; earth electrodes; electric fields; finite difference methods; insulator contamination; leakage currents; ambient operating conditions; dry band; electrostatic field computation; finite difference code; grounded electrode; high voltage electrode; leakage currents; numerical simulation; numerical techniques; partially wet insulator surface; polluted insulators; potential distortion; potential distribution; rotationally symmetric approximation; stress distribution; wet polluted band; Air pollution; Computational modeling; Conductivity; Electrodes; Electrostatics; Finite difference methods; Insulation; Leakage current; Numerical simulation; Surface contamination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation, 2004. Conference Record of the 2004 IEEE International Symposium on
ISSN :
1089-084X
Print_ISBN :
0-7803-8447-4
Type :
conf
DOI :
10.1109/ELINSL.2004.1380561
Filename :
1380561
Link To Document :
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