• DocumentCode
    2317421
  • Title

    Partial discharge modelling based on a cylindrical model in solid dielectrics

  • Author

    Chen, George ; Baharudin, Fauzan

  • Author_Institution
    Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton
  • fYear
    2008
  • fDate
    21-24 April 2008
  • Firstpage
    74
  • Lastpage
    78
  • Abstract
    Partial discharges (PDs) are harmful to electrical insulation as they may degrade the material. Consequently, a lot of efforts have been made to develop suitable systems for PD measurements and monitoring. Due to the complexity of PDs and many factors that can influence PD characteristics, the research on PDs is still very active and several models have been proposed over the years to understand the behaviours of PDs. In the present paper, we have investigated the frequency characteristics of a cylindrical void in solid dielectric based on the model proposed by Forssen. Using similar program environments of MATLAB and COMSOL, our algorithm performs better in computation time and gives the similar results compared with the experiments. More importantly, a new interface has been developed so users are able to change parameters. This new feature allows the user to examine effects of various factors such as conductivity of the cavity surface, the applied voltage and statistical time lag on PD characteristics.
  • Keywords
    dielectric materials; partial discharge measurement; COMSOL; MATLAB; PD characteristics; PD measurements; PD monitoring; cavity surface; conductivity; cylindrical model; partial discharge modelling; solid dielectrics; Degradation; Dielectric materials; Dielectric measurements; Dielectrics and electrical insulation; Frequency; Mathematical model; Monitoring; Partial discharge measurement; Partial discharges; Solid modeling; Partial discharge; frequency effect; simulation; solid dielectrics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Condition Monitoring and Diagnosis, 2008. CMD 2008. International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-1621-9
  • Electronic_ISBN
    978-1-4244-1622-6
  • Type

    conf

  • DOI
    10.1109/CMD.2008.4580233
  • Filename
    4580233