Spectral properties of CVD diamond and high-purity semi-insulating SiC

Author

Polyakov, V.I. ; Garin, B.M. ; Rukovishnikov, A.I. ; Avdeeva, L.A. ; Dutta, J.M. ; Varnin, V.P.

Author_Institution

Inst. of Radio Eng. & Electron., RAS, Moscow, Russia

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

CVD diamond and HPSI SiC, which are among the most promising low dielectric loss materials for mm and sub-mm electromagnetic waves, were studied by charge-based deep level transient spectroscopy. The activation energy, capture cross-section, and concentration of the levels, which are induced by defects of the different nature, were obtained. Experimental results and their implication to loss properties are discussed.

Keywords

chemical vapour deposition; deep level transient spectroscopy; diamond; dielectric losses; dielectric materials; dielectric thin films; microwave materials; silicon compounds; submillimetre waves; wide band gap semiconductors; C; CVD diamond film; SiC; capture cross-section; charge-based deep level transient spectroscopy; dielectric loss materials; high-purity semi-insulating material; millimetre electromagnetic waves; spectral properties; submillimetre electromagnetic waves; Capacitance measurement; Charge measurement; Current measurement; Dielectric loss measurement; Insulation; Plasma measurements; Q measurement; Semiconductor materials; Silicon carbide; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5324784

Filename

5324784